<100> Strained-SiGe-Channel p-MOSFET with Enhanced Hole Mobility and Lower Parasitic Resistance
نویسنده
چکیده
Employment of the <100> channel direction in a strained-Si0.8Ge0.2 p-MOSFET provides a hole mobility enhancement as large as 25% and a parasitic resistance reduction of 20% compared to a <110> strained-Si0.8Ge0.2 channel p-MOSFET, which already has a better mobility and threshold voltage roll-off than the Si p-MOSFET. These results suggest that the <100> strained-SiGe-channel p-MOSFET can be used to achieve highspeed CMOS devices that operate at low voltages. v Masashi Shima (Manuscript received December 10, 2002)
منابع مشابه
High Mobility Strained Si/SiGe Heterostructure MOSFETs
Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...
متن کاملMOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital allo...
متن کاملتحلیل و بهبود جریان حالت خاموش نانو ماسفت کرنشی دومحوره سیلیکانی نوع p با کنترل چگالی ناخالصی زیرلایه مجازی
In biaxially strained p-MOSFET with Si channel, formation of a parasitic parallel channel due to misalignment of energy bands degrades device performance by increasing off-state current. In this paper a new approach has been introduced to eliminate this parasitic channel by increasing the dopant concentration of virtual substrate up to . Using simulation the impact of this method on the parasit...
متن کاملHigh mobility Si1-xGex PMOS transistors to 5K
P-channel Sil-@ex MOSFETs with peak Ge content x =0.3, 0.4, and 0.5 have been fabricated via MBE and experimentally characterized from room temperature down to 5K. Mobility enhancements relative to identically processed Si controls were largest at the lowest tempera2 tures. The highest mobility measured, pm = 1622 cm N.sec for the x = 0.3 SiGe device, was approximately a factor of four higher t...
متن کاملTransport in Thin-Body MOSFETs Fabricated in Strained Si and Strained Si/SiGe Heterostructures on Insulator
The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...
متن کامل